Crystal growth within a phase change memory cell

Ni2As2O7 pyrochlore nanomaterial: Solid state synthesis, crystal structure determination, crystal phase growth study and physical properties

Nanostructured Ni2As2O7 semiconductor samples were synthesized by a solid state method among As2O3 and Ni(NO3)2.6H2O raw materials at 650 °C (S1) and 750 °C (S2) as reaction temperatures. The synthesized nanomaterials were characterized by powder X-ray diffraction (PXRD) technique and F...

Interfacial phase-change memory.

Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decrease...

Ni2As2O7 pyrochlore nanomaterial: Solid state synthesis, crystal structure determination, crystal phase growth study and physical properties

Nanostructured Ni2As2O7 semiconductor samples were synthesized by a solid state method among As2O3 and Ni(NO3)2.6H2O raw materials at 650 °C (S1) and 750 °C (S2) as reaction temperatures. The synthesized nanomaterials were characterized by powder X-ray diffraction (PXRD) technique and F...

A reliable, secure phase-change memory as a main memory

Failure Mechanisms of Ge2Sb2Te5 Phase Change Memory Cell

The failure of the Ge2Sb2Te5 (GST) phase change memory cell has been investigated by the High Resolution Transmission Electron Microscopy (HR-TEM). The HR-TEM results indicate that the both of hexagonal structured GeSbTe (GST) and meta stable GeTe phases are appeared after about 10 cycles of set/reset operations. The face centered cubic structured GST seems to be quickly changed from amorphous ...